Theme: High Speed and High Accuracy Analog Memory System
We have designed a new analog memory system based on floating-gate EEPROM technology by introducing a new Self-Convergent-Writing Scheme. In this system, writing is performed in about 1us with 8 bit accuracy or so, which can be applied to 20`30MHz analog video signal. Aiming at applying the memory in the association architecture that is a high speed recognition system, we examined new bias conditions for memory cells including Sense-Amp, Wordline Switch, Bitline Switch, and Buffer.